Millimeter-wave radiometers can benefit from state-of-the-art on-chip technologies to construct a fully integrated front-end at frequencies above 100 GHz. The first step is to integrate a fully capable antenna design with a complex low-low noise amplifier in the same technology. This paper presents the integration simulation of a passive antenna array in IHP's SiGe 130 nm BiCMOS SG13G2 process and a 3-stage low-noise amplifier using the same technology. The final seamlessly integrated design proves to be a viable first building block for a future complete radiometer frontend-on-a-chip for frequencies exceeding 100 GHz. © 2025 European Association on Antennas and Propagation.