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This work has been funded by the Ministry of Science and Innovation of Spain through the Multiplier Project (RTI2018-096937-B-C21) and by the Comunidad de Madrid through the Madrid-PV2 Project (S2018/EMT-4308). M.M. acknowledges a Formacion del Personal Investigador Predoctoral Fellowship (PRE2019-087894) and E.A. acknowledges Ramon y Cajal Fellowship (RYC-2015-18539), both funded by the Ministry of Science and Innovation of Spain. M.H.Z. is grateful to Universidad Politecnica de Madrid for funding from the 'Programa Propio para Ayudas Predoctorales de la UPM'. This work was co-authored by Alliance for Sustainable Energy, LLC, the manager and operator of the National Renewable Energy Laboratory for the U.S. Department of Energy (DOE) under Contract No. DE-AC36-08GO28308. Funding provided by the Office of Energy Efficiency and Renewable Energy, Solar Energy Technology Office under contracts DE-00034911 and DE-00034358.

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Compensated contacts for three-terminal transistor solar cells

Publicado en:Conference Record Of The Ieee Photovoltaic Specialists Conference. 447-450 - 2021-01-01 (), DOI: 10.1109/PVSC43889.2021.9518987

Autores: Martínez, M; Svatek, SA; Zehender, MH; Steiner, MA; Warren, EL; Tamboli, AC; McMahon, WE; Durán, I; Martí, A; Antolín, E

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Resumen

The heterojunction bipolar transistor solar cell (HBTSC) is an alternative to conventional double-junction solar cells that combines the advantages of three-terminal architectures with a compact design. A critical part of the HBTSC fabrication is the implementation of the middle contact, the one associated to the base layer in the transistor structure, because this layer can be damaged by the diffusion of metallic species during contact annealing. As a solution we propose to implement a "compensated contact", that is, to leave a thin (< 200 nm) portion of emitter or collector between the base layer and the contact metals and compensate its doping during contact annealing. Using an Au/Zn/Au metal structure to compensate a 150 nm thick portion of the collector, we obtain a specific contact resistance similar to 8.10(-4) Omega cm(2). This value is fairly invariant for annealing temperatures between 400 and 460 degrees C and annealing times between 2 and 5 minutes, and it does not improve by adding Pd to the metallic stack. Optimizing the compensated contact technology opens the path to the realization of III-V-material-based HBTSCs with open-circuit voltages and fill factors comparable to those of conventional multijunction architectures.

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