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Analysis of institutional authors

Fernando-Saavedra ACorresponding AuthorAlbert SAuthorBengoechea-Encabo AAuthorSánchez-García MaAuthorCalleja EAuthor

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June 12, 2023
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Growth of non-polar m-plane GaN pseudo-substrates by Molecular beam epitaxy

Publicated to: JOURNAL OF CRYSTAL GROWTH. 617 127272- - 2023-09-01 617(), DOI: 10.1016/j.jcrysgro.2023.127272

Authors:

Fernando-Saavedra, Amalia; Albert, Steven; Bengoechea-Encabo, Ana; Trampert, Achim; Xie, Mengyao; Sanchez-Garcia, Miguel A; Calleja, Enrique
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Affiliations

Paul Drude Inst Festkoperelektron, Hausvogteipl 5-7, D-10117 Berlin, Germany - Author
Paul Drude Institut fur Festkorperelektronik - Author
Tianrui Semicond Mat Suzhou Ltd Co, Third Zone Datong Rd 20, Suzhou 215151, Peoples R China - Author
Tianrui Semiconductor Materials (Suzhou) Ltd.co. - Author
Univ Politecn Madrid, Dept Ingn Elect, ETSI Telecomunicac, Ave Complutense 30,Ciudad Univ, Madrid 28040, Spain - Author
Univ Politecn Madrid, ISOM, Ave Complutense 30,Ciudad Univ, Madrid 28040, Spain - Author
Universidad Politécnica de Madrid - Author
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Abstract

Non-polar m-plane GaN films were grown by Plasma Assisted Molecular Beam Epitaxy on γ-LiAlO2 (1 0 0) substrates by a controlled coalescence of GaN nanocolumns obtained by a two-step process including a top-down nanopillars etching from a GaN buffer and a subsequent bottom-up overgrowth. Transmission electron microscopy data show a significant reduction of extended defects density in the coalesced film as compared to the initial GaN buffer, most likely due to a filter effect by the regrowth process on the nanopillars inclined walls. Low temperature photoluminescence spectra back this reduction by a strong intensity decrease of the stacking faults fingerprint emission peaks, while a very intense donor-bound excitonic emission at 3.472 eV, 2.8 meV wide, becomes dominant.
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Keywords

a3b1b2etchinglayersmolecular beam epitaxynanocolumnsnitridesselective epitaxysemiconducting iii -v materialsA1A1.etchingA3.molecular beam epitaxyA3.selective epitaxyB1.nitridesB2.semiconducting iii-v materialsSelective-area growth

Quality index

Bibliometric impact. Analysis of the contribution and dissemination channel

The work has been published in the journal JOURNAL OF CRYSTAL GROWTH due to its progression and the good impact it has achieved in recent years, according to the agency Scopus (SJR), it has become a reference in its field. In the year of publication of the work, 2023, it was in position , thus managing to position itself as a Q2 (Segundo Cuartil), in the category Inorganic Chemistry. Notably, the journal is positioned en el Cuartil Q3 for the agency WoS (JCR) in the category Crystallography.

From a relative perspective, and based on the normalized impact indicator calculated from World Citations provided by WoS (ESI, Clarivate), it yields a value for the citation normalization relative to the expected citation rate of: 1.29. This indicates that, compared to works in the same discipline and in the same year of publication, it ranks as a work cited above average. (source consulted: ESI Nov 13, 2025)

Specifically, and according to different indexing agencies, this work has accumulated citations as of 2026-04-25, the following number of citations:

  • WoS: 4
  • Scopus: 4
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Impact and social visibility

From the perspective of influence or social adoption, and based on metrics associated with mentions and interactions provided by agencies specializing in calculating the so-called "Alternative or Social Metrics," we can highlight as of 2026-04-25:

  • The use of this contribution in bookmarks, code forks, additions to favorite lists for recurrent reading, as well as general views, indicates that someone is using the publication as a basis for their current work. This may be a notable indicator of future more formal and academic citations. This claim is supported by the result of the "Capture" indicator, which yields a total of: 2 (PlumX).

It is essential to present evidence supporting full alignment with institutional principles and guidelines on Open Science and the Conservation and Dissemination of Intellectual Heritage. A clear example of this is:

  • Assignment of a Handle/URN as an identifier within the deposit in the Institutional Repository: https://oa.upm.es/85781/

As a result of the publication of the work in the institutional repository, statistical usage data has been obtained that reflects its impact. In terms of dissemination, we can state that, as of

  • Views: 158
  • Downloads: 86
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Leadership analysis of institutional authors

This work has been carried out with international collaboration, specifically with researchers from: China; Germany.

There is a significant leadership presence as some of the institution’s authors appear as the first or last signer, detailed as follows: First Author (FERNANDO SAAVEDRA, AMALIA LUISA) and Last Author (CALLEJA PARDO, ENRIQUE).

the author responsible for correspondence tasks has been FERNANDO SAAVEDRA, AMALIA LUISA.

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Project objectives

La aportación persigue los siguientes objetivos: analizar el crecimiento de películas de GaN no polar m-plane mediante epitaxia por haz molecular asistida por plasma sobre sustratos γ-LiAlO2 (1 0 0); caracterizar el proceso de coalescencia controlada de nanocolumnas de GaN mediante un método de dos pasos que incluye grabado de nanopilares y sobrecrecimiento; evaluar la reducción de la densidad de defectos extendidos en la película coalescida mediante microscopía electrónica de transmisión; determinar el efecto filtro del proceso de re-crecimiento en las paredes inclinadas de los nanopilares; y correlacionar los resultados estructurales con espectroscopía de fotoluminiscencia a baja temperatura para confirmar la disminución de defectos y la intensidad de la emisión excitónica ligada a donadores.
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Most relevant results

Los resultados más relevantes del estudio incluyen: la obtención de películas de GaN no polar m-plane mediante epitaxia por haz molecular asistida por plasma sobre sustratos γ-LiAlO2 (1 0 0) mediante un proceso de coalescencia controlada de nanocolumnas de GaN; la reducción significativa de la densidad de defectos extendidos en la película coalescida en comparación con el buffer inicial, evidenciada por microscopía electrónica de transmisión; la confirmación de esta reducción a través de espectros de fotoluminiscencia a baja temperatura que muestran una marcada disminución de los picos de emisión asociados a fallas de apilamiento; y la dominancia de una intensa emisión excitónica ligada a donantes a 3.472 eV con un ancho de 2.8 meV.
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