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Analysis of institutional authors

Martin PAuthorFernández Palacios, PabloAuthorDominguez MAuthorFernández-Palacios PAuthorLombardero IAuthorSanchez-Perez CAuthorGarcia IAuthorAlgora CAuthorGabás MCorresponding Author

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November 6, 2023
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Refractive indices and extinction coefficients of p-type doped Germanium wafers for photovoltaic and thermophotovoltaic devices

Publicated to: SOLAR ENERGY MATERIALS AND SOLAR CELLS. 264 112612- - 2024-01-01 264(), DOI: 10.1016/j.solmat.2023.112612

Authors:

Blanco, E; Martín, P; Domínguez, M; Fernández-Palacios, P; Lombardero, I; Sanchez-Perez, C; García, I; Algora, C; Gabás, M
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Affiliations

MN8 Energy, Pozuelo De Alarcon 28224, Madrid, Spain - Author
Univ Cadiz, Dept Fis Mat Condensada, E-11510 Cadiz, Spain - Author
Univ Cadiz, IMEYMAT Inst Res Electron Microscopy & Mat, E-11510 Cadiz, Spain - Author
Univ Politecn Madrid, Inst Energia Solar, Madrid 28040, Spain - Author
Universidad de Cádiz - Author
Universidad Politécnica de Madrid - Author
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Abstract

Our work is primarily driven by the absence of optical parameters for p-type Ge wafers, adaptable to any specific doping value, and, at the same time, able to cover any application from infrared to ultraviolet regime. To address this, we have determined the complex refractive indices of p-type commercial Ge wafers through a wide spectral range (200–25000 nm) employing spectroscopic ellipsometry and transmittance measurements. The doping levels in these wafers vary between 1015 and 1018 cm−3, which are most commonly used in photovoltaic, thermophotovoltaic and optoelectronic applications. Our data fitting procedure resulted in a dielectric function that successfully reproduces not only the critical points associated with interband transitions above the bandgap, but also absorption features below the bandgap connected to intraband processes. Consequently, we obtained the complex refraction indices of these Ge wafers as a function of dopant concentration, and these have been corroborated through experimental reflectance and transmittance measurements. Additionally, we achieved a successful validation of these refractive indices by simulating the external quantum efficiency of Ge single-junction solar cell with two different thickness fabricated on a Ge wafer with a different doping level than those analyzed in this study.
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Keywords

complex refractive indexge solar cellsgrowthlightsolar cell modellingspectroscopic ellipsometrythermophotovoltaicsComplex refractive indexGe solar cellsGe wafersGrapheneSolar cell modellingSpectroscopic ellipsometryThermophotovoltaics

Quality index

Bibliometric impact. Analysis of the contribution and dissemination channel

The work has been published in the journal SOLAR ENERGY MATERIALS AND SOLAR CELLS due to its progression and the good impact it has achieved in recent years, according to the agency WoS (JCR), it has become a reference in its field. In the year of publication of the work, 2024 there are still no calculated indicators, but in 2023, it was in position 36/187, thus managing to position itself as a Q1 (Primer Cuartil), in the category Physics, Applied.

Independientemente del impacto esperado determinado por el canal de difusión, es importante destacar el impacto real observado de la propia aportación.

Según las diferentes agencias de indexación, el número de citas acumuladas por esta publicación hasta la fecha 2026-04-24:

  • WoS: 6
  • Scopus: 5
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Impact and social visibility

From the perspective of influence or social adoption, and based on metrics associated with mentions and interactions provided by agencies specializing in calculating the so-called "Alternative or Social Metrics," we can highlight as of 2026-04-24:

  • The use, from an academic perspective evidenced by the Altmetric agency indicator referring to aggregations made by the personal bibliographic manager Mendeley, gives us a total of: 15.
  • The use of this contribution in bookmarks, code forks, additions to favorite lists for recurrent reading, as well as general views, indicates that someone is using the publication as a basis for their current work. This may be a notable indicator of future more formal and academic citations. This claim is supported by the result of the "Capture" indicator, which yields a total of: 15 (PlumX).

With a more dissemination-oriented intent and targeting more general audiences, we can observe other more global scores such as:

  • The Total Score from Altmetric: 1.
  • The number of mentions on the social network X (formerly Twitter): 1 (Altmetric).

It is essential to present evidence supporting full alignment with institutional principles and guidelines on Open Science and the Conservation and Dissemination of Intellectual Heritage. A clear example of this is:

  • Assignment of a Handle/URN as an identifier within the deposit in the Institutional Repository: https://oa.upm.es/91352/

As a result of the publication of the work in the institutional repository, statistical usage data has been obtained that reflects its impact. In terms of dissemination, we can state that, as of

  • Views: 95
  • Downloads: 17
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Leadership analysis of institutional authors

There is a significant leadership presence as some of the institution’s authors appear as the first or last signer, detailed as follows: Last Author (GABAS PEREZ, MARIA MERCEDES).

the author responsible for correspondence tasks has been GABAS PEREZ, MARIA MERCEDES.

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