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This work was supported by European Research Council (ERC) through European Union's Horizon Europe Research and Innovation Program under Grant 101054098.
Differential Phase Change Memory (PCM) Cell for Drift-Compensated In-Memory Computing
Publicated to:Ieee Transactions On Electron Devices. 71 (12): 7447-7453 - 2024-12-01 71(12), DOI: 10.1109/TED.2024.3480898
Authors: Pistolesi, L; Ravelli, L; Glukhov, A; Herranz, A de Gracia; Herranz, AD; Lopez-Vallejo, M; Carissimi, M; Pasotti, M; Rolandi, P L; Rolandi, PL; Redaelli, A; Martin, I Munoz; Martin, IM; Bianchi, S; Bonfanti, A; Ielmini, D
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Abstract
Phase change memory (PCM) is a scalable, reliable, and robust technology for embedded and stand-alone memory device. PCM has also been extensively demonstrated for analog in-memory computing (IMC), which allows energy-efficient acceleration of AI workloads. High-temperature data retention requirements in PCM devices are met by Ge-rich GeSbTe (GST), which allows to satisfy consumer-and automotive-grade reliability specifications. However, Ge-rich GST suffers from set state drift, which affects the stability of the multilevel cell (MLC), hence the accuracy of IMC. This work presents: 1) a novel multilevel programming algorithm from weak reset state to prevent conductance instabilities; 2) a drift compensation scheme through a differential weight approach, validated on matrix-vector multiplication (MVM) after high-temperature annealing; and 3) a detailed study of the impact of PCM variability and weight quantization on hardware implementation of neural networks.
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Bibliometric impact. Analysis of the contribution and dissemination channel
The work has been published in the journal Ieee Transactions On Electron Devices due to its progression and the good impact it has achieved in recent years, according to the agency WoS (JCR), it has become a reference in its field. In the year of publication of the work, 2024 there are still no calculated indicators, but in 2023, it was in position 71/187, thus managing to position itself as a Q2 (Segundo Cuartil), in the category Physics, Applied. Notably, the journal is positioned en el Cuartil Q2 para la agencia Scopus (SJR) en la categoría Electronic, Optical and Magnetic Materials.
Independientemente del impacto esperado determinado por el canal de difusión, es importante destacar el impacto real observado de la propia aportación.
Según las diferentes agencias de indexación, el número de citas acumuladas por esta publicación hasta la fecha 2025-08-25:
- Scopus: 1
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Leadership analysis of institutional authors
This work has been carried out with international collaboration, specifically with researchers from: Italy.