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Analysis of institutional authors

Fernandez Gonzalez, Alvaro De GuzmanAuthorUlloa, J. M.AuthorHierro, A.Author

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June 9, 2019
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Optimization of InGaAsN(Sb)/GaAs quantum dots for optical emission at 1.55 mu m with low optical degradation

Publicated to: JOURNAL OF CRYSTAL GROWTH. 323 (1): 215-218 - 2011-05-15 323(1), DOI: 10.1016/j.jcrysgro.2010.12.045

Authors:

Milla, M J; Guzman, A; Gargallo-Caballero, R; Ulloa, J M; Hierro, A
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Affiliations

ETSI Telecomunicac, ISOM, Madrid 28040, Spain - Author

Abstract

Low optical degradation in GaInAsN(Sb)/GaAs quantum dots (QDs) p-i-n structures emitting up to 1.55 mu m is presented in this paper. We obtain emission at different energies by means of varying N content from 1 to 4%. The samples show a low photoluminescence (PL) intensity degradation of only 1 order of magnitude when they are compared with pure InGaAs QD structures, even for an emission wavelength as large as 1.55 mu m. The optimization studies of these structures for emission at 1.55 mu m are reported in this work. High surface density and homogeneity in the QD layers are achieved for 50% In content by rapid decrease in the growth temperature after the formation of the nanostructures. Besides, the effect of N and Sb incorporation in the redshift and PL intensity of the samples is studied by postgrowth rapid thermal annealing treatments. As a general conclusion, we observe that the addition of Sb to QD with low N mole fraction is more efficient to reach 1.55 pm and high PL intensity than using high N incorporation in the QD. Also, the growth temperature is determined to be an important parameter to obtain good emission characteristics. Finally, we report room temperature PL emission of InGaAsN(Sb)/GaAs at 1.4 mu m. (C) 2010 Elsevier B.V. All rights reserved.
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Keywords

Crystal morphologyGaasGrowthLight emitting diodesMolecular beam epitaxyMolecular-beam epitaxyN incorporationNanostructuresOperationQuantum dotsSemiconducting iii-v materialsSemiconducting iiiv materialsTemperatureWells

Quality index

Bibliometric impact. Analysis of the contribution and dissemination channel

The work has been published in the journal JOURNAL OF CRYSTAL GROWTH due to its progression and the good impact it has achieved in recent years, according to the agency Scopus (SJR), it has become a reference in its field. In the year of publication of the work, 2011, it was in position , thus managing to position itself as a Q1 (Primer Cuartil), in the category Materials Chemistry.

Independientemente del impacto esperado determinado por el canal de difusión, es importante destacar el impacto real observado de la propia aportación.

Según las diferentes agencias de indexación, el número de citas acumuladas por esta publicación hasta la fecha 2026-04-27:

  • WoS: 11
  • Scopus: 10
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Impact and social visibility

From the perspective of influence or social adoption, and based on metrics associated with mentions and interactions provided by agencies specializing in calculating the so-called "Alternative or Social Metrics," we can highlight as of 2026-04-27:

  • The use of this contribution in bookmarks, code forks, additions to favorite lists for recurrent reading, as well as general views, indicates that someone is using the publication as a basis for their current work. This may be a notable indicator of future more formal and academic citations. This claim is supported by the result of the "Capture" indicator, which yields a total of: 11 (PlumX).

It is essential to present evidence supporting full alignment with institutional principles and guidelines on Open Science and the Conservation and Dissemination of Intellectual Heritage. A clear example of this is:

  • Assignment of a Handle/URN as an identifier within the deposit in the Institutional Repository: https://oa.upm.es/11870/

As a result of the publication of the work in the institutional repository, statistical usage data has been obtained that reflects its impact. In terms of dissemination, we can state that, as of

  • Views: 417
  • Downloads: 373
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Leadership analysis of institutional authors

There is a significant leadership presence as some of the institution’s authors appear as the first or last signer, detailed as follows: First Author (Milla, M. J.) and Last Author (HIERRO CANO, ADRIAN).

the author responsible for correspondence tasks has been Milla, M. J..

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