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Analysis of institutional authors

Del Canizo, CarlosAuthor

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June 9, 2019
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Optimizing phosphorus diffusion for photovoltaic applications: Peak doping, inactive phosphorus, gettering, and contact formation

Publicated to: JOURNAL OF APPLIED PHYSICS. 119 (18): 185704- - 2016-05-14 119(18), DOI: 10.1063/1.4949326

Authors:

Wagner, H; Dastgheib-Shirazi, A; Min, B; Morishige, AE; Steyer, M; Hahn, G; del Cañizo, C; Buonassisi, T; Altermatt, PP
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Affiliations

Global Photovolta Simulat Grp, Case Postale 1056, CH-1211 Geneva 1, Switzerland - Author
Inst Solar Energy Res Hamelin ISFH, D-31860 Emmerthal, Germany - Author
Leibniz Univ Hannover, Inst Solid State Phys, Dept Solar Energy, D-30167 Hannover, Germany - Author
MIT, 77 Massachusetts Ave, Cambridge, MA 02139 USA - Author
Univ Konstanz, Dept Phys, D-78457 Constance, Germany - Author
Univ Politecn Madrid, Inst Energia Solar, E-28040 Madrid, Spain - Author
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Abstract

The phosphosilicate glass (PSG), fabricated by tube furnace diffusion using a POCl3 source, is widely used as a dopant source in the manufacturing of crystalline silicon solar cells. Although it has been a widely addressed research topic for a long time, there is still lack of a comprehensive understanding of aspects such as the growth, the chemical composition, possible phosphorus depletion, the resulting in-diffused phosphorus profiles, the gettering behavior in silicon, and finally the metal-contact formation. This paper addresses these different aspects simultaneously to further optimize process conditions for photovoltaic applications. To do so, a wide range of experimental data is used and combined with device and process simulations, leading to a more comprehensive interpretation. The results show that slight changes in the PSG process conditions can produce high-quality emitters. It is predicted that PSG processes at 860 degrees C for 60 min in combination with an etch-back and laser doping from PSG layer results in high-quality emitters with a peak dopant density N-peak = 8.0 x 10(18) cm(-3) and a junction depth d(j) = 0.4 mu m, resulting in a sheet resistivity rho(sh) = 380 Omega/sq and a saturation current-density J(0) below 10 fA/cm(2). With these properties, the POCl3 process can compete with ion implantation or doped oxide approaches. Published by AIP Publishing.
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Keywords

BoronDevice simulationEmittersGlass layersMulticrystalline siliconPrecipitationRecombinationSiSilicon solar-cellsUnified mobility model

Quality index

Bibliometric impact. Analysis of the contribution and dissemination channel

The work has been published in the journal JOURNAL OF APPLIED PHYSICS due to its progression and the good impact it has achieved in recent years, according to the agency Scopus (SJR), it has become a reference in its field. In the year of publication of the work, 2016, it was in position , thus managing to position itself as a Q1 (Primer Cuartil), in the category Physics and Astronomy (Miscellaneous).

From a relative perspective, and based on the normalized impact indicator calculated from World Citations provided by WoS (ESI, Clarivate), it yields a value for the citation normalization relative to the expected citation rate of: 1.64. This indicates that, compared to works in the same discipline and in the same year of publication, it ranks as a work cited above average. (source consulted: ESI Nov 13, 2025)

This information is reinforced by other indicators of the same type, which, although dynamic over time and dependent on the set of average global citations at the time of their calculation, consistently position the work at some point among the top 50% most cited in its field:

  • Weighted Average of Normalized Impact by the Scopus agency: 2.41 (source consulted: FECYT Mar 2025)

Specifically, and according to different indexing agencies, this work has accumulated citations as of 2026-04-24, the following number of citations:

  • WoS: 52
  • Scopus: 53
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Impact and social visibility

From the perspective of influence or social adoption, and based on metrics associated with mentions and interactions provided by agencies specializing in calculating the so-called "Alternative or Social Metrics," we can highlight as of 2026-04-24:

  • The use, from an academic perspective evidenced by the Altmetric agency indicator referring to aggregations made by the personal bibliographic manager Mendeley, gives us a total of: 82.
  • The use of this contribution in bookmarks, code forks, additions to favorite lists for recurrent reading, as well as general views, indicates that someone is using the publication as a basis for their current work. This may be a notable indicator of future more formal and academic citations. This claim is supported by the result of the "Capture" indicator, which yields a total of: 82 (PlumX).

With a more dissemination-oriented intent and targeting more general audiences, we can observe other more global scores such as:

  • The Total Score from Altmetric: 6.

It is essential to present evidence supporting full alignment with institutional principles and guidelines on Open Science and the Conservation and Dissemination of Intellectual Heritage. A clear example of this is:

  • The work has been submitted to a journal whose editorial policy allows open Open Access publication.
  • Assignment of a Handle/URN as an identifier within the deposit in the Institutional Repository: https://oa.upm.es/40489/

As a result of the publication of the work in the institutional repository, statistical usage data has been obtained that reflects its impact. In terms of dissemination, we can state that, as of

  • Views: 487
  • Downloads: 1,856
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Leadership analysis of institutional authors

This work has been carried out with international collaboration, specifically with researchers from: Germany; Switzerland; United States of America.

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