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Analysis of institutional authors

Garcia, GregorioCorresponding AuthorPalacios, PabloAuthorWahnon, PerlaAuthor

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June 9, 2019
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First principle study of V-implantation in highly-doped silicon materials

Publicated to: COMPUTATIONAL MATERIALS SCIENCE. 136 207-215 - 2017-08-01 136(), DOI: 10.1016/j.commatsci.2017.05.005

Authors:

García, G; Casanova-Páez, M; Palacios, P; Menéndez-Proupin, E; Wahnón, P
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Affiliations

ETSI Aeronaut & Espacio, Dept Fis Aplicada Ingn Aeronaut & Naval, Pz Cardenal Cisneros 3, Madrid 28040, Spain - Author
Univ Chile, Fac Ciencias, Dept Fis, Las Palmeras 3425, Santiago 7800003, Chile - Author
Univ Politecn Madrid, ETSI Telecomunicac, Dept Tecnol Foton & Bioingn, Ciudad Univ S-N, E-28040 Madrid, Spain - Author
Univ Politecn Madrid, ETSI Telecomunicac, Inst Energia Solar, E-28040 Madrid, Spain - Author
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Abstract

Density Functional Theory (DFT) has been used to study structural and electronic properties of new compounds based on V-implanted Si and their potential as infrared photodetectors. Effects derived from the implantation of V on bulk-Si are calculated at different configurations, i.e., substitutional (Vsi) and interstitial (Vi) positions as well as the effect of Si vacancies. Despite all implantation processes are energetically penalized, Vi-implanted compound leads to the lowest formation energies. Furthermore, interstitial implantation in the vicinity of a Si vacancy would lead to a highly favored process. The analysis of the electronic structure shows that V, implanted compounds own an intermediate band (due to t(2g) states of vanadium atom), which allows new electronic transitions below 1.0 eV. To deal with the bandgap underestimation of common DFT methods, quasiparticle calculations have been applied via the G(0)W(0) approximation. Applied correction to the bandgap based on GW has considerably improved theoretical results compared to experimental ones. The investigation of the absorption features points out that the absorption response can be extended up to infrared region via sub-gap transitions across the intermediate band. This work highlights the potential of V-implanted silicon based materials with infrared response. (C) 2017 Elsevier B.V. All rights reserved.
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Keywords

Augmented-wave methodBrillouin-zone integrationsDftG w 0 0G(0)w(0)InfraredIntermediate bandIntermediate bandsLaser irradiationSiSub-bandgap absorption

Quality index

Bibliometric impact. Analysis of the contribution and dissemination channel

The work has been published in the journal COMPUTATIONAL MATERIALS SCIENCE due to its progression and the good impact it has achieved in recent years, according to the agency Scopus (SJR), it has become a reference in its field. In the year of publication of the work, 2017, it was in position , thus managing to position itself as a Q1 (Primer Cuartil), in the category Computer Science (Miscellaneous). Notably, the journal is positioned above the 90th percentile.

Independientemente del impacto esperado determinado por el canal de difusión, es importante destacar el impacto real observado de la propia aportación.

Según las diferentes agencias de indexación, el número de citas acumuladas por esta publicación hasta la fecha 2026-04-12:

  • Google Scholar: 7
  • WoS: 8
  • Scopus: 8
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Impact and social visibility

From the perspective of influence or social adoption, and based on metrics associated with mentions and interactions provided by agencies specializing in calculating the so-called "Alternative or Social Metrics," we can highlight as of 2026-04-12:

  • The use of this contribution in bookmarks, code forks, additions to favorite lists for recurrent reading, as well as general views, indicates that someone is using the publication as a basis for their current work. This may be a notable indicator of future more formal and academic citations. This claim is supported by the result of the "Capture" indicator, which yields a total of: 7 (PlumX).

It is essential to present evidence supporting full alignment with institutional principles and guidelines on Open Science and the Conservation and Dissemination of Intellectual Heritage. A clear example of this is:

  • The work has been submitted to a journal whose editorial policy allows open Open Access publication.
  • Assignment of a Handle/URN as an identifier within the deposit in the Institutional Repository: https://oa.upm.es/50177/

As a result of the publication of the work in the institutional repository, statistical usage data has been obtained that reflects its impact. In terms of dissemination, we can state that, as of

  • Views: 1,265
  • Downloads: 420
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Leadership analysis of institutional authors

This work has been carried out with international collaboration, specifically with researchers from: Chile.

There is a significant leadership presence as some of the institution’s authors appear as the first or last signer, detailed as follows: First Author (GARCIA MORENO, GREGORIO JOSE) and Last Author (WAHNON BENARROCH, PERLA).

the author responsible for correspondence tasks has been GARCIA MORENO, GREGORIO JOSE.

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Awards linked to the item

This work was partially supported by the Comunidad de Madrid project MADRID-PV (S2013/MAE/2780) and by the Ministerio de Economia y Competitividad through the project BOOSTER (ENE2013-46624-C4-2-R). The authors acknowledge the computer resources and technical assistance provided by the Centro de Supercomputacion and Visualizacion de Madrid (CeSViMa).
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