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Analysis of institutional authors

Garcia-Linares Fontes, PabloAuthorHernandez Martin, EstelaAuthorSteer M.j.AuthorSteer, M JAuthorSteer M.AuthorLopez Estrada, EstherAuthorHernández EAuthorLopez EAuthorMarti A.AuthorLuque AAuthor

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June 17, 2019
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InAs/AlGaAs quantum dot intermediate band solar cells with enlarged sub-bandgaps

Publicated to:Conference Record Of The Ieee Photovoltaic Specialists Conference. 652-656 - 2012-11-26 (), DOI: 10.1109/PVSC.2012.6317694

Authors: Ramiro, I; Antolin, E; Steer, M J; Linares, P G; Hernandez, E; Artacho, I; Lopez, E; Ben, T; Ripalda, J M; Molina, S I; Briones, F; Stanley, C R; Marti, A; Luque, A

Affiliations

CNM CSIC, Inst Microelect Madrid, Madrid, Spain - Author
IMN-Instituto de Micro y Nanotecnología (CNM-CSIC) - Author
Instituto de Energia Solar - Author
Silicio y Nuevos Conceptos para Células Solares. Universidad Politécnica de Madrid - Author
Univ Cadiz, Fac Ciencias, Dept Ciencia Mat Ingn Met Quim Inorgan, Cadiz, Spain - Author
Univ Glasgow, Sch Engn, Glasgow G12 8QQ, Lanark, Scotland - Author
Univ Politecn Madrid, Inst Energia Solar, Madrid, Spain - Author
Universidad de Cádiz - Author
University of Glasgow - Author
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Abstract

In the last decade several prototypes of intermediate band solar cells (IBSCs) have been manufactured. So far, most of these prototypes have been based on InAs/GaAs quantum dots (QDs) in order to implement the IB material. The key operation principles of the IB theory are two photon sub-bandgap (SBG) photocurrent, and output voltage preservation, and both have been experimentally demonstrated at low temperature. At room temperature (RT), however, thermal escape/relaxation between the conduction band (CB) and the IB prevents voltage preservation. To improve this situation, we have produced and characterized the first reported InAs/AlGaAs QD-based IBSCs. For an Al content of 25% in the host material, we have measured an activation energy of 361 meV for the thermal carrier escape. This energy is about 250 meV higher than the energies found in the literature for InAs/GaAs QD, and almost 140 meV higher than the activation energy obtained in our previous InAs/GaAs QD-IBSC prototypes including a specifically designed QD capping layer. This high value is responsible for the suppression of the SBG quantum efficiency under monochromatic illumination at around 220 K. We suggest that, if the energy split between the CB and the IB is large enough, activation energies as high as to suppress thermal carrier escape at room temperature (RT) can be achieved. In this respect, the InAs/AlGaAs system offers new possibilities to overcome some of the problems encountered in InAs/GaAs and opens the path for QD-IBSC devices capable of achieving high efficiency at RT. © 2012 IEEE.

Keywords

Carrier escapeGallium arsenideIntermediate band solar cellsNovel conceptsPhotonic band gapPhotovoltaic cellsQuantum dotsStrainTemperature measurement

Quality index

Bibliometric impact. Analysis of the contribution and dissemination channel

The work has been published in the journal Conference Record Of The Ieee Photovoltaic Specialists Conference due to its progression and the good impact it has achieved in recent years, according to the agency Scopus (SJR), it has become a reference in its field. In the year of publication of the work, 2012, it was in position , thus managing to position itself as a Q1 (Primer Cuartil), in the category Control and Systems Engineering.

From a relative perspective, and based on the normalized impact indicator calculated from World Citations from Scopus Elsevier, it yields a value for the Field-Weighted Citation Impact from the Scopus agency: 1.23, which indicates that, compared to works in the same discipline and in the same year of publication, it ranks as a work cited above average. (source consulted: ESI Nov 14, 2024)

This information is reinforced by other indicators of the same type, which, although dynamic over time and dependent on the set of average global citations at the time of their calculation, consistently position the work at some point among the top 50% most cited in its field:

  • Field Citation Ratio (FCR) from Dimensions: 5.19 (source consulted: Dimensions Jul 2025)

Specifically, and according to different indexing agencies, this work has accumulated citations as of 2025-07-26, the following number of citations:

  • WoS: 8
  • Scopus: 37

Impact and social visibility

From the perspective of influence or social adoption, and based on metrics associated with mentions and interactions provided by agencies specializing in calculating the so-called "Alternative or Social Metrics," we can highlight as of 2025-07-26:

  • The use of this contribution in bookmarks, code forks, additions to favorite lists for recurrent reading, as well as general views, indicates that someone is using the publication as a basis for their current work. This may be a notable indicator of future more formal and academic citations. This claim is supported by the result of the "Capture" indicator, which yields a total of: 39 (PlumX).

Leadership analysis of institutional authors

This work has been carried out with international collaboration, specifically with researchers from: United Kingdom.

There is a significant leadership presence as some of the institution’s authors appear as the first or last signer, detailed as follows: First Author (Ramiro I) and Last Author (LUQUE LOPEZ, ANTONIO).

the author responsible for correspondence tasks has been Ramiro I.