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Analysis of institutional authors

Romero, MfCorresponding AuthorBrana, AfAuthorCalle, F.Author

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July 5, 2020
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Effects of N-2 plasma pretreatment on the SiN passivation of AlGaN/GaN HEMT

Publicated to: IEEE ELECTRON DEVICE LETTERS. 29 (3): 209-211 - 2008-03-01 29(3), DOI: 10.1109/LED.2008.915568

Authors:

Romero, M F; Jimenez, A; Sanchez, J Miguel; Brana, A F; Gonzalez-Posada, F; Cuerdo, R; Calle, F; Munoz, E
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Affiliations

Escuela Tecnica Superior de Ingenieros de Telecomunicacion, Madrid - Author
Univ Alcala, Escuela Politecn, Dept Electron, Madrid 28805, Spain - Author
Univ Politecn Madrid, Dept Ingn Electron, E-28040 Madrid, Spain - Author
Univ Politecn Madrid, Escuela Tecn Super Ingenieros Telecommun, Inst Sistemas Optoelect & Microtecnol, E-28040 Madrid, Spain - Author
Univ Politecn Madrid, ETSIT, ISOM, E-28040 Madrid, Spain - Author
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Abstract

The impact of in situ low-power N-2 plasma pretreatment, prior to silicon-nitride (SiN) deposition, was investigated in AlGaN/GaN high-electron mobility transistors (HEMTs). These studies reveal that the use of N-2 plasma in HEMT passivation reduces current-collapse and gate-lag effects. Such treatment is also beneficial to improve gate leakage, and from RF measurements, no degradation of f(max) was observed. These beneficial effects of the N-2 plasma pretreatment seem to be due to a significant reduction in interface charge density, as shown in this letter using GaN MIS devices, where a decrease of 60% was observed.
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Keywords

Algan/gan high-electron mobility transistors (hemts)Current collapseField-effect transistorsGan misGanhemtsPassivationPerformanceSilicon nitride (sin)

Quality index

Bibliometric impact. Analysis of the contribution and dissemination channel

The work has been published in the journal IEEE ELECTRON DEVICE LETTERS due to its progression and the good impact it has achieved in recent years, according to the agency WoS (JCR), it has become a reference in its field. In the year of publication of the work, 2008, it was in position 23/228, thus managing to position itself as a Q1 (Primer Cuartil), in the category Engineering, Electrical & Electronic.

Independientemente del impacto esperado determinado por el canal de difusión, es importante destacar el impacto real observado de la propia aportación.

Según las diferentes agencias de indexación, el número de citas acumuladas por esta publicación hasta la fecha 2026-04-09:

  • Google Scholar: 55
  • WoS: 37
  • Scopus: 42
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Impact and social visibility

From the perspective of influence or social adoption, and based on metrics associated with mentions and interactions provided by agencies specializing in calculating the so-called "Alternative or Social Metrics," we can highlight as of 2026-04-09:

  • The use, from an academic perspective evidenced by the Altmetric agency indicator referring to aggregations made by the personal bibliographic manager Mendeley, gives us a total of: 51.
  • The use of this contribution in bookmarks, code forks, additions to favorite lists for recurrent reading, as well as general views, indicates that someone is using the publication as a basis for their current work. This may be a notable indicator of future more formal and academic citations. This claim is supported by the result of the "Capture" indicator, which yields a total of: 51 (PlumX).

With a more dissemination-oriented intent and targeting more general audiences, we can observe other more global scores such as:

  • The Total Score from Altmetric: 3.

It is essential to present evidence supporting full alignment with institutional principles and guidelines on Open Science and the Conservation and Dissemination of Intellectual Heritage. A clear example of this is:

  • The work has been submitted to a journal whose editorial policy allows open Open Access publication.
  • Assignment of a Handle/URN as an identifier within the deposit in the Institutional Repository: https://oa.upm.es/2020/

As a result of the publication of the work in the institutional repository, statistical usage data has been obtained that reflects its impact. In terms of dissemination, we can state that, as of

  • Views: 941
  • Downloads: 1,444
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Leadership analysis of institutional authors

There is a significant leadership presence as some of the institution’s authors appear as the first or last signer, detailed as follows: First Author (ROMERO ROJO, FATIMA) and Last Author (Muñoz, E.).

the author responsible for correspondence tasks has been ROMERO ROJO, FATIMA.

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